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TPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

TPS7H2201HKR/EM

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

TPS7H2201HKRSLASHEM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments

德州儀器

TPS7H2201HKRSLASHEM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

TPS7H2201HKRSLASHEM

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201HKRSLASHEM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

TPS7H2201HKRSLASHEM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments

德州儀器

TPS7H2201MDAPTSEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments

德州儀器

供應(yīng)商型號品牌批號封裝庫存備注價格
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23+
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電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨立分銷。原廠核心渠道
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C&KCOMPONENTS
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原裝正品,歡迎來電咨詢!
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更多PTS7H2201HKR/EM供應(yīng)商 更新時間2025-3-31 16:06:00

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