PXB16050U中文資料飛利浦數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange.

FEATURES

? Input and output matching cells allow an easier design of circuits

? Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

? Interdigitated structure provides high emitter efficiency

? Gold metallization realizes very stable characteristics and excellent lifetime

? Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS

Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz.