TPS3808EG125DBVRQ1

Marking：Q125；Package：SOT-23；TPS3808E-Q1 Low-Quiescent-Current, Programmable-Delay Supervisory Circuit for Automotive

1Features ?AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto+125°C ?Undervoltagemonitoringforpowerrails –Reliablemonitoringwithhighthreshold accuracy(1typical) –Fixedvoltagethresholdoptionsfrom0.9Vto5 V –Adjustablevoltageoption

W25Q128JWKIQ

Marking：Q128J；Package：K；1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

1.GENERALDESCRIPTIONS TheW25Q128JW(128M-bit)SerialFlashmemoryprovidesastoragesolutionforsystemswithlimitedspace,pinsandpower.The25QseriesoffersflexibilityandperformancewellbeyondordinarySerialFlashdevices.TheyareidealforcodeshadowingtoRAM,executingcodedi

W25Q128JWYIQ

Marking：Q128J；Package：Y；1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

1.GENERALDESCRIPTIONS TheW25Q128JW(128M-bit)SerialFlashmemoryprovidesastoragesolutionforsystemswithlimitedspace,pinsandpower.The25QseriesoffersflexibilityandperformancewellbeyondordinarySerialFlashdevices.TheyareidealforcodeshadowingtoRAM,executingcodedi

5962-9555101NXD

Marking：Q193M；Package：SOIC；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

5962-9555101NXDR

Marking：Q193M；Package：SOIC；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

FTK13N03ADFN22

Marking：Q13N03；Package：DFN2020-6L(0.8mm)；N-Channel Enhancement Mode Field Effect Transistor

FTK14P02S

Marking：Q14P02YY；Package：SOP-8；P Channel MOS FET

LM2D16P02

Marking：Q1216；Package：DFN2020-6L；P-ChannelEnhancement Mode Power MOSFET

LM8S15N10A

Marking：Q15G10A；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

LMQ1216A

Marking：Q1216；Package：DFN2020-6L；P-ChannelEnhancement Mode Power MOSFET