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Q67100-Q2148中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書
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廠商型號 |
Q67100-Q2148 |
功能描述 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
文件大小 |
1.3072 Mbytes |
頁面數(shù)量 |
24 頁 |
生產(chǎn)廠商 | Siemens Semiconductor Group |
企業(yè)簡稱 |
SIEMENS【西門子】 |
中文名稱 | 德國西門子股份公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-2-25 22:30:00 |
人工找貨 | Q67100-Q2148價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
Q67100-Q2148規(guī)格書詳情
3.3V 256 K x 16-Bit EDO-DRAM
3.3V 256 K x 16-Bit EDO-DRAM
(Low power version with Self Refresh)
The HYB 314175BJ/BJL is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314175BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.
Preliminary Information
? 262 144 words by 16-bit organization
? 0 to 70 °C operating temperature
? Fast access and cycle time
? RAS access time:
50 ns (-50 version)
55 ns (-55 version)
60 ns (-60 version)
? CAS access time:
13ns (-50 & -55 version)
15 ns (-60 version)
? Cycle time:
89 ns (-50 version)
94 ns (-55 version)
104 ns (-60 version)
? Hype page mode (EDO) cycle time
20 ns (-50 & -55 version)
25 ns (-60 version)
? High data rate
50 MHz (-50 & -55 version)
40 MHz (-60 version)
? Single + 3.3 V (±0.3 V) supply with a builtin VBB generator
? Low Power dissipation
max. 450 mW active (-50 version)
max. 432 mW active (-55 version)
max. 378 mW active (-60 version)
? Standby power dissipation
7.2 mW standby (TTL)
3.6 mW max. standby (CMOS)
0.72 mW max. standby (CMOS) for
Low Power Version
? Output unlatched at cycle end allows two-dimensional chip selection
? Read, write, read-modify write, CASbefore-RAS refresh, RAS-only refresh, hidden-refresh and hyper page (EDO) mode capability
? 2 CAS / 1 WE control
? Self Refresh (L-Version)
? All inputs and outputs TTL-compatible
? 512 refresh cycles / 16 ms
? 512 refresh cycles / 128 ms
Low Power Version only
? Plastic Packages:
P-SOJ-40-1 400mil width
產(chǎn)品屬性
- 型號:
Q67100-Q2148
- 制造商:
INFINEON
- 制造商全稱:
Infineon Technologies AG
- 功能描述:
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SIEMENS/西門子 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
LNFINE |
2023+ |
TSSOP |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
98900 |
原廠集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨- |
詢價(jià) | ||||
INFINEON |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價(jià) | |||
LNFINE |
24+ |
TSSOP() |
200 |
詢價(jià) | |||
infineon |
16+ |
2500 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) | |||
SIEMENS/西門子 |
2447 |
NA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
最新 |
2000 |
原裝正品現(xiàn)貨 |
詢價(jià) |