SG-SOIC-3006

Leadguidepreventsovercompressionofelastomer

SI-3006KWD

1A,Low-Dropout,DualOutput,1.8V&3.3VRegulator

FEATURES ■1AOutputCurrentperChannel ■0.6VMaximumDropoutVoltageatIO=1A ■FastTransientResponse ■1.5mAMaximumStandbyCurrent ■FoldbackCurrentLimiting ■GroundTabforSuperiorHeatDissipation ■ThermalProtection

SI-3006KWD-TL

1A,Low-Dropout,DualOutput,1.8V&3.3VRegulator

FEATURES ■1AOutputCurrentperChannel ■0.6VMaximumDropoutVoltageatIO=1A ■FastTransientResponse ■1.5mAMaximumStandbyCurrent ■FoldbackCurrentLimiting ■GroundTabforSuperiorHeatDissipation ■ThermalProtection

SI-3006KWM

1A,Low-Dropout,DualOutput,1.8V&3.3VRegulator

FEATURES ■1AOutputCurrentperChannel ■0.6VMaximumDropoutVoltageatIO=1A ■FastTransientResponse ■1.5mAMaximumStandbyCurrent ■FoldbackCurrentLimiting ■GroundTabforSuperiorHeatDissipation ■ThermalProtection

SI-3006KWM-TL

1A,Low-Dropout,DualOutput,1.8V&3.3VRegulator

FEATURES ■1AOutputCurrentperChannel ■0.6VMaximumDropoutVoltageatIO=1A ■FastTransientResponse ■1.5mAMaximumStandbyCurrent ■FoldbackCurrentLimiting ■GroundTabforSuperiorHeatDissipation ■ThermalProtection

SLA3006M

4-Output,LowDropoutVoltageDropperTypeforUSBHub

SP3006

0.5pF,8kVDiodeArray

Description TheSP3006Seriesincludesultralowcapacitancebacktobackzenerdiodestoprotecthigh-speedportsofelectronicequipmentthatmayexperiencedestructiveelectrostaticdischarges(ESD).TherobustdiodecansafelyabsorbrepetitiveESDstrikesatthemaximumlevelspecifiedinth

SPF3006

Built-indroopingtypeovercurrentandthermalprotectioncircuits

SPN3006

N-ChannelEnhancementModeMOSFET

SSF3006DB

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelate