R07DS0666EJ0100中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in

a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating

the need for an external SBD for this purpose.

Features

? Based on Intel 8 ? 8 DrMOS Specification.

? Built-in power MOS FET suitable for Desktop, Server, Notebook application.

? Low-side MOS FET with built-in SBD for lower loss and reduced ringing.

? Built-in driver circuit which matches the power MOS FET

? Built-in tri-state input function which can support a number of PWM controllers

? High-frequency operation (above 1 MHz) possible

? VIN operating-voltage range: 27 Vmax

? Large average output current (Max.50 A)

? Achieve low power dissipation

? Controllable driver: Remote on/off

? Low-side MOS FET disabled function for DCM operation

? Double thermal protection: Thermal Warning & Thermal Shutdown

? Built-in bootstrapping Switch

? Small package: QFN56 (8 mm ? 8 mm ? 0.95 mm)

? Terminal Pb-free/Halogen-free