R19DS0058EJ0140中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Features

? All bridges can be controlled independently.

An ultra-fine CMOS process has been adopted for low power

consumption in a design with no charge-pump.

? Built-in H bridge of a full-swing drive 4 circuit

? Built-in low-voltage malfunction prevention circuit

? Power supply systems are all internally isolated and include

a function to prevent reverse current between power supplies.

? It is housed in a small package (24 PCSP 3.5x3.5 mm t=0.8mm