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RC28F128J3F75A
廠商型號

RC28F128J3F75A

功能描述

Numonyx? Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

文件大小

2.20301 Mbytes

頁面數(shù)量

66

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

Micron鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-4 10:50:00

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RC28F128J3F75A規(guī)格書詳情

Introduction

This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 μs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx? Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

產(chǎn)品屬性

  • 型號:

    RC28F128J3F75A

  • 功能描述:

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    StrataFlash™

  • 標(biāo)準(zhǔn)包裝:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存儲(chǔ)器:

    RAM

  • 存儲(chǔ)器類型:

    SRAM - 異步

  • 存儲(chǔ)容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    2.2 V ~ 3.6 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    48-VFBGA

  • 供應(yīng)商設(shè)備封裝:

    48-VFBGA(6x8)

  • 包裝:

    帶卷(TR)

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
INTEL/英特爾
22+
BGA
35175
原裝正品現(xiàn)貨
詢價(jià)
micron(鎂光)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
MICRON/美光
19+
BGA
31050
所有報(bào)價(jià)以當(dāng)天為準(zhǔn)
詢價(jià)
BGA
21+
MIC
12588
原裝正品,自己庫存 假一罰十
詢價(jià)
Micron
22+
64EasyBGA
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
MICRON/鎂光
21+
BGA
13880
公司只售原裝,支持實(shí)單
詢價(jià)
MICRON/美光
24+
BGA
20000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
MICRON/美光
23+/24+
BGA
9865
進(jìn)口原裝/原盒原標(biāo)/原廠渠道
詢價(jià)
MICRON
24+
BGA QFP
13500
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
Micron Technology Inc.
24+
64-EasyBGA(10x13)
56200
一級代理/放心采購
詢價(jià)