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RFL1N12L中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

RFL1N12L
廠商型號(hào)

RFL1N12L

功能描述

1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs

文件大小

31 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-20 16:10:00

人工找貨

RFL1N12L價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

RFL1N12L規(guī)格書詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Formerly developmental type TA09528.

Features

? 1A, 120V and 150V

? rDS(ON) = 1.900?

產(chǎn)品屬性

  • 型號(hào):

    RFL1N12L

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs

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