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FDD6676S

30VN-ChannelPowerTrenchMOSFET

GeneralDescription TheFDS6676SisdesignedtoreplaceaDPAKMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676SincludesanintegratedSchottkydiodeusing

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6676S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDMA6676PZ

MOSFET??Single,P-Channel,POWERTRENCH

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FDMC6676BZ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

PDF上傳者:深圳德田科技有限公司

FDP6676

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=84A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP6676

30VN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“l(fā)owside”synchronousrectifieroperation,providinganextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6676S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=76A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP6676S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6676

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6676

30VN-ChannelMOSFET

Features ?IncludesSyncFETSchottkybodydiode ?Lowgatecharge(45nCtypical) ?Highperformancetrenchtechnologyfor extremelylowRDS(ON)andfastswitching ?Highpowerandcurrenthandlingcapability RoHSCompliant (VGS=10V) VDS(V)=30V ID=13A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

晶體管資料

  • 型號:

    RJH6676

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    功率開關(guān) (PSW)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

  • 最大電流允許值:

    15A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

    175W

  • 放大倍數(shù):

  • 圖片代號:

    B-70

  • vtest:

    0

  • htest:

    999900

  • atest:

    15

  • wtest:

    175

詳細參數(shù)

  • 型號:

    RJH6676

  • 制造商:

    Harris Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
RCA
24+
2039
詢價
HAR
23+
RJH6676
13528
振宏微原裝正品,假一罰百
詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
ELNA
15+ROHS
DIP
72800
一級質(zhì)量專業(yè)優(yōu)勢長期供應(yīng)
詢價
ELNA
23+
DIP
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
ELN
1535+
5000
詢價
ELNA
19+
SMD
2400
詢價
ELNA
2023+
SMD
5000
安羅世紀電子只做原裝正品貨
詢價
ELNA
12000
全新原裝現(xiàn)貨 樣品可售
詢價
更多RJH6676供應(yīng)商 更新時間2025-4-12 15:30:00