RM2301S3

Marking：S1；Package：SOT-323；P-Channel 20-V(D-S) MOSFET

FEATURE TrenchFETPowerMOSFET

RM2301S9

Marking：2301；Package：SOT-363；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-20V,ID=-3A RDS(ON)

RM2302C

Marking：S2；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features TrenchFETPowerMOSFET LoadSwitchforPortableDevices. DC/DCConverter.

RM2303

Marking：2303；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-30V,ID=-2.0A RDS(ON)

RM2304E

Marking：2304；Package：SOT-23；N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

FEATURES RDS(ON)

RM2305B

Marking：A5SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=-20V,ID=-4.1A RDS(ON)

RM2306E

Marking：2306；Package：SOT-23；N-Channel 30V (D-S) MOSFET , ESD Protected

FEATURES RDS(ON)

RM2308

Marking：2308；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=3A RDS(ON)

RM2309E

Marking：2309E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures ESDRating:2000VHBM Highpowerandcurrenthandingcapability Leadfreeproductisacquired Surfacemountpackage VDS=-30V,ID=-3.5A RDS(ON)

RM230N85HD

Marking：230N85；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Features BV285VIb238A Ptot