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RM50HG-12S

Super Fast Recovery Single Diode (50 Amperes/600 Volts)

Description: PowerexSuperFastRecoveryDiodesaredesignedforuseinapplicationsrequiringfastswitching. Features: □Non-IsolatedPackage □PlanarChips □trr=200nsMax. Applications: □SnubberCircuits □SwitchingPowerSupplies □FreeWheeling

POWEREX

Powerex Power Semiconductors

RM50HG-12S

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE ?IDCDCcurrent..................................50A ?VRRMRepetitivepeakreversevoltage................600V ?trrReverserecoverytime.............0.2μs ?ONEARM ?Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

RM50HG-12S_01

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE

HIGHSPEEDSWITCHINGUSENON-INSULATEDTYPE ?IDCDCcurrent..................................50A ?VRRMRepetitivepeakreversevoltage................600V ?trrReverserecoverytime.............0.2μs ?ONEARM ?Non-InsulatedType APPLICATION Forsnubbercircuit(IPMorIGBTmo

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

RM50N200HD

Marking：50N200；Package：TO-263；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N200T2

Marking：50N200；Package：TO-220；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N200T7

Marking：50N200；Package：TO-247；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N200TI

Marking：50N200；Package：TO-220F；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

RECTRON

Rectron Semiconductor

RM50N250T2

Marking：50N250；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=250V,ID=50A RDS(ON)

RECTRON

Rectron Semiconductor

RM50N30DN

Marking：50N30；Package：DFN3x3；AdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

SimpleDriveRequirement SmallSize&LowerProfile RoHSCompliant&Halogen-Free

RECTRON

Rectron Semiconductor

RM50N60DFV

Marking：50N60；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=50A RDS(ON)16mΩ@VGS=10V RDS(ON)20mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation

RECTRON

Rectron Semiconductor

詳細(xì)參數(shù)

  • 型號(hào)：

    RM50

  • 制造商：

    MITSUBISHI

  • 制造商全稱：

    Mitsubishi Electric Semiconductor

  • 功能描述：

    MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
SMD-8
7500
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!
 詢價(jià)
MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
MITSUBISHI
10+
主營(yíng)模塊
85
原裝正品,公司正品供應(yīng)
 詢價(jià)
MITSUBISHI
23+
模塊
3562
詢價(jià)
24+
5000
公司存貨
 詢價(jià)
MITSUBIS
23+
500A1200
595
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
MITSUBISHI
23+
MODULE
7780
全新原裝優(yōu)勢(shì)
 詢價(jià)
N/A
24+
SOP
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
TEConnectivity
新
5
全新原裝 貨期兩周
 詢價(jià)
MITSUBI
23+
MODULE
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多RM50供應(yīng)商 更新時(shí)間2025-4-22 15:41:00

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