RMPA2265RF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

General Description

The RMPA2265 power amplifier module (PAM) is designed for WCDMA/HSDPA applications in both the 1850–1910 and 1920–1980 MHz bands. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.

Features

■ Single positive-supply operation and low power and shutdown modes

■ 42 WCDMA efficiency at +28 dBm average output power 1920–1980 MHz

■ 39 WCDMA efficiency at 27.5 dBm average output power 1850–1910 MHz

■ Meets UMTS/WCDMA performance requirements in both UMTS bands

■ Meets HSDPA performance requirements

■ Compact Lead-free compliant LCC package– (3.0 x 3.0 x 1.0 mm nominal)

■ Internally matched to 50 Ohms and DC blocked RF input/output