首頁(yè) >RS6N120BH>規(guī)格書列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

RS6N120BH

Marking：RS6N120BH；Package：HSOP8；Nch 80V 135A Power MOSFET

Features 1)Lowon-resistance 2)Highpowerpackage(HSOP8) 3)Pb-freeplating;RoHScompliant 4)Halogenfree 5)100%RgandUIStested Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTP6N120SC

1200VN-ChannelSiliconCarbidePowerMOSFET

Features ?Highblockingvoltage ?Highspeedswitchingwithlowcapacitance ?Highoperatingjunctiontemperaturecapability ?Veryfastandrobustintrinsicbodydiode Applications ?Solarinverters ?UPS ?HighvoltageDC/DCconverters ?Switchmodepowersupplies

DINTEK

DinTek Semiconductor Co,.Ltd

IXFA6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFA6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA6N120P

PowerMOSFET

IXYS

IXYS Corporation

IXFH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH6N120

HighVoltageHiPerFETPowerMOSFET

HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandto

IXYS

IXYS Corporation

IXFH6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFH6N120P

PowerMOSFET

IXYS

IXYS Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ROHM/羅姆
24+
DFN5060-8L
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
ROHM Semiconductor
2245
100
Rohm授權(quán)代理,自營(yíng)現(xiàn)貨
 詢價(jià)
ROHM Semiconductor
兩年內(nèi)
60
原裝正品現(xiàn)貨,德為本,正為先,通天下!
 詢價(jià)
REASUNOS
22+
TO-220
130000
瑞森微代理,支持終端生產(chǎn)
 詢價(jià)
REASUNOS
22+
TO-220
80000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
24+
N/A
72000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
REASUNOS(瑞森)
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價(jià)
REASUNOS(瑞森)
2112+
TO-220F
105000
10個(gè)/袋一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
REASUNOS(瑞森)
24+
con
2500
優(yōu)勢(shì)庫(kù)存,原裝正品
 詢價(jià)
REASUNOS(瑞森半導(dǎo)體)
23+
TO220F
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
更多RS6N120BH供應(yīng)商 更新時(shí)間2025-2-7 10:34:00

相關(guān)規(guī)格書

更多

相關(guān)庫(kù)存

更多