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SBT5401

PNPSiliconTransistor

AUK

AUK corp

SBT5401

PNPSiliconTransistor

Description ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-160V ?Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) ?ComplementarypairwithSBT5551

AUK

AUK corp

SBT5401

PNPSiliconTransistor

Description ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage: VCBO=-160V,VCEO=-160V ?Lowcollectorsaturationvoltage: VCE(sat)=-0.5V(MAX.) ?ComplementarypairwithSBT5551

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SBT5401

Generalpurposeamplifier

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SBT5401F

PNPSiliconTransistor

Description ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-160V ?Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) ?ComplementarypairwithSBT5551F

AUK

AUK corp

SBT5401F

PNPSiliconTransistor

AUK

AUK corp

SBT5401F

PNPSiliconTransistor

Description ?Generalpurposeamplifier ?Highvoltageapplication Features ?Highcollectorbreakdownvoltage: VCBO=-160V,VCEO=-160V ?Lowcollectorsaturationvoltage: VCE(sat)=-0.5V(MAX.) ?ComplementarypairwithSBT5551F

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SBT5401F

Generalpurposeamplifier

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SD5401

QUADN-CHANNELLATERALDMOSJFETSWITCHTYPICALCHARACTERISTICS

QUADN-CHANNELLATERALDMOSJFETSWITCHTYPICALCHARACTERISTICS

LINEAR

Linear Integrated Systems

SD5401

QUADN-CHANNELLATERALDMOSSWITCHZENERPROTECTED

Description TheSD5000/5400seriesofmonolithicswitchesfeaturesfourindividualdouble-diffusedenhancement-modeMOSFETsbuiltonacommonsubstrate.Thesebidirectionaldevicesprovidelowon-resistanceandlowinterelectrodecapacitancestominimizeinsertionlossandcrosstalk. Features ?

LINEAR

Linear Integrated Systems

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20000
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MOLEX
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2020+
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SIGMAINDUCTORS
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SIG
23+
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780
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SIG
20+
CDIP
780
進(jìn)口原裝現(xiàn)貨,假一賠十
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更多S5401F供應(yīng)商 更新時(shí)間2025-4-4 10:20:00