首頁(yè)>S70GL01GN00FAI013>規(guī)格書(shū)詳情

S70GL01GN00FAI013中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

S70GL01GN00FAI013
廠商型號(hào)

S70GL01GN00FAI013

功能描述

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

文件大小

1.89339 Mbytes

頁(yè)面數(shù)量

83 頁(yè)

生產(chǎn)廠商 SPANSION
企業(yè)簡(jiǎn)稱(chēng)

spansion飛索

中文名稱(chēng)

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-6 10:08:00

人工找貨

S70GL01GN00FAI013價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

S70GL01GN00FAI013規(guī)格書(shū)詳情

General Description

The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

■ Two 512 Megabit (S29GL512N) in a single 64-ball Fortified-BGA package

■ Two Chip Enable pins

— Two CE# pins to control selection of each internal

S29GL512N devices

■ Single power supply operation

— 3 volt read, erase, and program operations

■ Manufactured on 110 nm MirrorBit process technology

■ Secured Silicon Sector region

— 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

■ Flexible sector architecture

— Each internal S29GL512N device has five

hundred-twelve 64Kword (128Kbyte) sector

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent write

protection

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

Performance Characteristics

■ High performance

— 110 ns (S29GL512N)

— 8-word/16-byte page read buffer

— 25 ns page read times

— 16-word/32-byte write buffer reduces overall

programming time for multiple-word updates

■ Low power consumption (typical values at 3.0 V, 5 MHz)

— 25 mA typical active read current;

— 50 mA typical erase/program current

— 1 μA typical standby mode current

■ Package options

— 64-ball Fortified BGA

Software & Hardware Features

■ Software features

— Program Suspend and Resume: read other sectors

before programming operation is completed

— Erase Suspend and Resume: read/program other

sectors before an erase operation is completed

— Data# polling and toggle bits provide status

— Unlock Bypass Program command reduces overall

multiple-word programming time

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

■ Hardware features

— Advanced Sector Protection

— WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

產(chǎn)品屬性

  • 型號(hào):

    S70GL01GN00FAI013

  • 制造商:

    SPANSION

  • 制造商全稱(chēng):

    SPANSION

  • 功能描述:

    3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Cypress
22+
NA
105
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
詢(xún)價(jià)
CypressSemiconductorCorp
19+
68000
原裝正品價(jià)格優(yōu)勢(shì)
詢(xún)價(jià)
Cypress Semiconductor Corp
24+
64-FBGA(11x13)
56200
一級(jí)代理/放心采購(gòu)
詢(xún)價(jià)
SPANSION
23+
BGA64
98900
原廠原裝正品現(xiàn)貨!!
詢(xún)價(jià)
SPANSION
23+
BGA64
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
2017+
NA
28562
只做原裝正品假一賠十!
詢(xún)價(jià)
SPANSION
25+
BGA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
Cypress
22+
64FBGA (11x13)
9000
原廠渠道,現(xiàn)貨配單
詢(xún)價(jià)
SPANSION
23+
NA
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢(xún)價(jià)
SPANSION/飛索半導(dǎo)體
22+
BGA
18000
原裝正品
詢(xún)價(jià)