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IRF7341

MOSFET

Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7341GPBF

HEXFET?PowerMOSFET

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341GTRPbF

HEXFET?PowerMOSFET

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341IPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF7341PBF

GenerationVTechnology

IRF

International Rectifier

IRF7341PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7341Q

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17

IRF

International Rectifier

IRF7341QPBF

HEXFET?PowerMOSFET

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
INTEL
2020+
DIP
930
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INTEL
19+
DIP-16
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
INTEL
2020+
DIP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INTEL/英特爾
23+
DIP16
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INTEL/英特爾
22+
DIP16
50000
只做原裝假一罰十,歡迎咨詢
 詢價
INTEL/英特爾
23+
NA/
4150
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
L3 NARDA-MITEQ
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
NS/國半
MSOP10
6698
詢價
NS
22+
MSOP-10
3000
原裝正品,支持實單
 詢價
JST/日壓
2508+
/
209858
一級代理，原裝現(xiàn)貨
 詢價
更多S7341供應(yīng)商 更新時間2025-4-4 8:22:00

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