BSS123

Marking：SA；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

FEATURE ●Pb-FreePackageisavailable.

BSS123

Marking：SA；Package：SOT-23；N-CHANNEL POWER MOSFET

FEATURE ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteand ControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

BSS123N3

Marking：SA；Package：SOT-23；N-CHANNEL MOSFET

Description TheBSS123N3isaN-channelenhancement-modeMOSFET. Features ?Lowon-resistance ?Highspeedswitching ?Low-voltagedrive(2.5V) ?Easilydesigneddrivecircuits ?Pb-freeleadplatingandhalogen-freepackage

BZX84J-B12

Marking：SA；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications ?Generalregulationfunctions ?Non-repetitivepeakreversepower dissipation:?40W ?Wideworking

BZX84J-B12-Q

Marking：SA；Package：SOD323F；Zener voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatleadSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Non-repetitivepeakreversepowerdissipation:≤100Wfortypes≤6.8V ?Non-repetitivepeakreversepowerdissipation

ESD12V32D-LA

Marking：SA；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 210~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Unidirectional) Lowclampingvoltage Workingvoltages:3.3V,5Vand12V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) Applications CellP

ESD12V32DS-LA

Marking：SA；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 210~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneunidirectionalI/Oline LowClampingVoltage WorkingVoltages:3.3V,5Vand12V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD):±30kV(a

IQD020N10NM5CGSC

Marking：SA；Package：PG-WHTFN-9；MOSFET OptiMOS? 5 Power?Transistor, 100 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?Superiorthermalresistance ?Optimizeddesignfordoublesidecooling ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

KTC4377

Marking：SA；Package：SOT-89；NPN Silicon Epitaxial Planar Transistor

FEATURES HighDCCurrentGainandExcellenthFELinearity :hFE(1)=140600(VCE=1V,IC=0.5A) :hFE(2)=70(Min.),140(Typ.)(VCE=1V,IC=2A). Lowsaturationvoltage:VCE(sat)=0.5V(Max).(IC=2A,IB=50mA). Smallflatpackage. APPLICATIONS Poweramplifierapplication. Powerswitchingapplication.

MBRX1A0

Marking：SA；Package：SOD-123FL；Schottky Barrier Rectifiers

FEATURES ◇Lowforwardsurgecurrent ◇Idealforsurfacemoutedapplications ◇Lowleakagecurrent