首頁>SCT027H65G3AG>規(guī)格書詳情
SCT027H65G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SCT027H65G3AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 650 V, 29 m? typ., 60 A in an H2PAK-7 package |
| 絲印標(biāo)識 | |
| 封裝外殼 | H2PAK-7 |
| 文件大小 |
374.48 Kbytes |
| 頁面數(shù)量 |
14 頁 |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱 | 意法半導(dǎo)體集團官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-2-12 11:14:00 |
SCT027H65G3AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
AIM |
23+ |
8215 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
ST |
22+ |
N/A |
17000 |
只做原裝正品 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ST/意法 |
24+ |
NA |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ST |
22+ |
NA |
5000 |
原裝正品支持實單 |
詢價 | ||
24+ |
100 |
詢價 | |||||
STMicroelectronics |
23+ |
SMD |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢價 | ||
ST |
23+ |
QFN |
92200 |
只做原裝進口現(xiàn)貨 |
詢價 | ||
ST |
47920 |
只做正品 |
詢價 | ||||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 |
