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SIHF740AS

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF740AS

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHF740AS

PowerMOSFET

FEATURES ?LowgatechargeQgresultsincimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF740ASTL

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF740ASTR

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF740LC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF740S

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHF740S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF740S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFI740G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    SFF740

  • 制造商：

    WINSEMI

  • 制造商全稱：

    WINSEMI

  • 功能描述：

    Silicon N-Channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
winsemi
22+
TO-220F
6000
十年配單,只做原裝
 詢價(jià)
SSDI
24+
DIP
6
詢價(jià)
SSDI
21+
TO-254
20000
全新原裝 公司現(xiàn)貨 價(jià)優(yōu)
 詢價(jià)
SSDI
2022
DIP
2600
原裝現(xiàn)貨,誠信經(jīng)營!
 詢價(jià)
SSDI
22+
TO-254
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價(jià)
SSDI
23+
DIP
20000
全新原裝假一賠十
 詢價(jià)
SSDI
24+
DIP
26200
原裝現(xiàn)貨,誠信經(jīng)營!
 詢價(jià)
SEMIWELL
23+
TO-220F
5000
原裝正品,假一罰十
 詢價(jià)
SEMIWELL
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
SEMIWELL
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
更多SFF740供應(yīng)商 更新時(shí)間2025-4-6 14:02:00

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