SFH615AGB中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The SFH615XXX features a large assortment of current

transfer ratio, low coupling capacitance and high isolation

voltage. These couplers have a GaAs infrared emitting diode

emitter, which is optically coupled to a silicon planar

phototransistor detector, and is incorporated in a plastic

DIP-4 package.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm lead spacing.

Creepage and clearance distances of > 8 mm are achieved

with option 6. This version complies with 60950

(DIN VDE 0805) for reinforced insulation up to operation

voltage of 400 VRMS or DC.

FEATURES

? Low CTR degradation

? Good CTR linearity depending on forward

current

? Isolation test voltage, 5300 VRMS

? High collector emitter voltage, VCEO = 70 V

? Low saturation voltage

? Fast switching times

? Temperature stable

? Low coupling capacitance

? End stackable, 0.100 (2.54 mm) spacing

? High common mode interference immunity (unconnected

base)

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912