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首頁 >SGH5N120RUFDTU>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
5N120	文件：451.43 Kbytes Page：7 Pages	5A,1200VN-CHANNELPOWERMOSFET ?DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. ?FEATURES0 RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A LowReverseTransferCapacitance *FastSwitchingCapabilit	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTG5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTG5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTG5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
HGTP5N120	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120BN	文件：82.52 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTs TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco	Intersil Intersil Corporation	Intersil
HGTP5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil

詳細參數(shù)

型號：
SGH5N120RUFDTU
功能描述：
IGBT 晶體管
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集電極—發(fā)射極最大電壓
VCEO：
650 V
集電極—射極飽和電壓：
2.3 V
柵極/發(fā)射極最大電壓：
20 V 在25
C的連續(xù)集電極電流：
150 A
柵極—射極漏泄電流：
400 nA
功率耗散：
187 W
封裝/箱體：
TO-247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
京海半導體(深圳)有限公司	SGH5N120RUFDTU	FAIRCHILD/仙童	21+	TO3P	10000	原裝現(xiàn)貨假一罰十	詢價
上海市鑫鴻達電子	SGH5N150UF	FAIRCHILD/仙童	2022+		13	全新原裝貨期兩周	詢價
深圳市星辰微電科技有限公司	SGH5R5N1040000	上海永銘	23+	NA	350000	永銘電子全系列在售,量大價優(yōu)	詢價
深圳市芯皇電子有限公司	SGH5R5N1040000	上海永銘	23+	NA	25000	專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)	詢價
深圳市勝彬電子有限公司	SGH603100F-22FZ	YAMAHA	22+	QFP-100	3000	原裝正品,支持實單	詢價
深圳市賽美科科技有限公司	SGH603100F-22FZ	YAMAHA		QFP-100	68500	一級代理原裝正品假一罰十價格優(yōu)勢長期供貨	詢價
深圳市一線半導體有限公司	SGH603100F-52F		24+	QFP	1500		詢價
瀚佳科技(深圳)有限公司	SGH603100F-52F	只做原裝	24+	QFP	36520	一級代理/放心采購	詢價
深圳市威爾健半導體有限公司	SGH60352F	N/A	23+	QFP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市得捷芯城科技有限公司	SGH60352F	N/A	24+	NA/	3550	原廠直銷,現(xiàn)貨供應(yīng),賬期支持!	詢價

更多SGH5N120RUFDTU供應(yīng)商更新時間2025-5-17 10:10:00

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