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SHB110

2SATA-150withRAID0,1

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

SIA110DJ

N-Channel100V(D-S)MOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?TunedforthelowestRDS-Qoss ?100RgandUIStested ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?Primarysideswitch ?DC/DCconverter ?Motordriveswitch ?Boostconverter

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFD110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFL110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFL110T

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR110,SiHFR110) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110T

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110T

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

晶體管資料

  • 型號(hào)：

    SGSD110

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-N+Darl

  • 性質(zhì)：

    功率放大 （L）_開關(guān)管 （S）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    80V

  • 最大電流允許值：

    25A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

  • 最大耗散功率：

    130W

  • 放大倍數(shù)：

    β>15

  • 圖片代號(hào)：

    B-70

  • vtest：

    80

  • htest：

    999900

  • atest：

    25

  • wtest：

    130

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32992
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更多SGSD110供應(yīng)商 更新時(shí)間2025-3-31 11:06:00

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