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BC859

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BC859

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highcurrentgain,Lowcollector-emittersaturationvoltage. Applications Generalpoweramplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BC859

Lowcurrent

Features ●Lowcurrent(max.100mA). ●Lowvoltage(max.45V).

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BC859

EPITAXIALPLANARPNPTRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

BC859

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon ?MoistureSensitivityLevel:1 ?ESDRating–HumanBodyModel:>4000V –MachineModel:>400V ?Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

FS

First Silicon Co., Ltd

BC859

PNPTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

BC859

PNPgeneralpurposetransistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC859A

PNPSiliconAFTransistors

PNPSiliconAFTransistors ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC859A

SwitchingandAmplifierApplications

Features ?SwitchingandAmplifierApplications ?Suitableforautomaticinsertioninthickandthin-filmcircuits ?LowNoise:BC859,BC860 ?ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC859A

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

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DO-214AB
25366
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50000
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68000
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SMCDO-214AB
22+
6000
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SMCDO-214
68000
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TSC/臺(tái)灣半導(dǎo)體
23+
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15250
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2022+
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20000
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