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60N06-18

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SUB60N06-18

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SUB60N06-18

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SUB60N06-18

N-Channel60-V(D-S),175CMOSFET

N-Channel60-V(D-S),175°CMOSFET 175°CRatedMaximumJunctionTemperature TrenchFET?PowerMOSFETs ProductSummary ??V(BR)DSS??60V ??rDS(on)???0.018Ω ??ID????????60A

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SUP60N06-18

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SUP60N06-18

N-Channel60-V(D-S),175CMOSFET

N-Channel60-V(D-S),175°CMOSFET 175°CRatedMaximumJunctionTemperature TrenchFET?PowerMOSFETs ProductSummary ??V(BR)DSS??60V ??rDS(on)???0.018Ω ??ID????????60A

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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