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BA679S

RFPINDiodes-SingleinMiniMELF(SOD-80)

FEATURES ?Widefrequencyrange10MHzto1GHz ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?CurrentcontrolledHFresistanceinadjustableattenuators MECHANICALDATA Case:MiniMELF(SOD-80) Weight:approx.31mg Cathode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BA679S-M

RFPINDiodes-SingleinMiniMELFSOD-80

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BA679S-M

RFPINDiodes-SingleinMiniMELF(SOD-80)

FEATURES ?Widefrequencyrange10MHzto1GHz ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?CurrentcontrolledHFresistanceinadjustable attenuators MECHANICALDATA Case:MiniMELF(SOD-80) Weight:approx.31mg Cathod

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB679

SiliconVariableCapacitanceDiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BD679

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD679

PlasticMedium??owerSiliconNPNDarlingtons

Thisseriesofplastic,medium?powersiliconNPNDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral?purposeamplifierapplications. Features ?HighDCCurrentGain:hFE=750(Min)@IC=1.5and2.0Adc ?MonolithicConstruction ?BD675,675A,677,677A,679,679A,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD679

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD679

PlasticMedium-PowerSiliconNPNDarlingtons

PlasticMedium-PowerSiliconNPNDarlingtions ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. ?HighDCCurrentGain—hFE=750(Min)@IC=1.5and2.0Adc ?MonolithicConstruction ?BD675,675A,677,677A,679,679A,681arecomplementar

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BD679

NPNSILICONDARLINGTONTRANSISTORS

PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD679

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

晶體管資料

  • 型號:

    SO679

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    35V

  • 最大電流允許值:

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    3DG82B,

  • 最大耗散功率:

    0.22W

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    35

  • htest:

    999900

  • atest:

    0

  • wtest:

    0.22

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
SOT-23
16900
正規(guī)渠道,只有原裝!
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ST
21+
SOT-23
23480
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STMicroelectronics
1742+
SOT23
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
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SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
ST
20+
SOT23
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
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ST/意法
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST
21+
SOT-23
10000
原裝現(xiàn)貨假一罰十
詢價
原廠
2021+
60000
原裝現(xiàn)貨,歡迎詢價
詢價
SKSEMI
22+
SOT-23
9000
原裝正品
詢價
更多SO679供應(yīng)商 更新時間2025-4-5 16:00:00