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SPB17N80C3

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPB17N80C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3

CoolMOS? Power Transistor Features new revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3

CoolMOS? Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3_07

CoolMOS? Power Transistor Features new revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB17N80C3_11

CoolMOS? Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXFH17N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH17N80Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabili

IXYS

IXYS Corporation

IXFN17N80

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT17N80Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0flammabili

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    SPB17N80C

  • 功能描述：

    MOSFET COOL MOS PWR TRANS 800V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFIEON
24+
TO-263
3600
原裝正品!公司現(xiàn)貨熱賣!
 詢價
INFINEON
2020+
TO263
18600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
INFINEON
24+
D2PAK
10000
英飛凌代理渠道,只做原裝QQ:2369405325
 詢價
INFINEON/英飛凌
2021+
SOT-263
16861
原裝進口假一罰十
 詢價
INFINEON
23+
TO-263
8800
只做原裝正品現(xiàn)貨
 詢價
INFINEON
21+
TO-263
3620
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
INFINEON/英飛凌
24+
TO263-3-2
20000
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON/英飛凌
2021+
D2PAK
12000
勤思達 只做原裝 現(xiàn)貨庫存
 詢價
更多SPB17N80C供應商 更新時間2025-2-13 16:24:00

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