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SPD

Over Voltage & Under Voltage Cut-Off With Surge Protection Device

OVCDFeatures ?ExtendsTheLifeOfYourFixtureByEliminating TemporaryOver/UnderVoltagesthatCan HarmSensitiveElectronicComponents ?Over6,000OperationsPerProductLifetime ?SafeRestore? -30SecondDelayonPower-Up -InstantDroponOver/UnderVoltageCondition -30SecondDel

ABLEPOWERPRODUCTS

ABLE Power Products

SPD

C to Ku Band Mixer, Detector, Modulator Applications

Features ?Verysmall-sizedceramicpackage ?Lessparasiticcomponents,conversionloss ?Manytypes:5singletypes,10integratedtypes

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

SPD

20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER

Features: ?FastRecovery:120nsecmaximum ?LowReverseLeakageCurrent ?SingleChipConstruction ?PIVto400V ?HermeticallySealed ?HighSurgeRating ?LowThermalResistance ?HigherVoltageDevicesAvailable–ContactFactory ?ForReversePolarityAddSuffix“R” ?Replacementfor

SSDI

Solid States Devices, Inc

SPD

Compact, High-Performance String Pot Dual Ouput to 50

TECTE Connectivity Ltd

泰科電子泰科電子有限公司

SPD01N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPD01N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD01N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N50C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPD02N50C3

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPD

  • 制造商：

    SANYO

  • 制造商全稱(chēng)：

    Sanyo Semicon Device

  • 功能描述：

    C to Ku Band Mixer, Detector, Modulator Applications

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DIODES/美臺(tái)
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
ON
24+
原廠封裝
7000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
凌陽(yáng)
2339+
DIE邦定/500
6232
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢(xún)價(jià)
INFINEON
05+
原廠原裝
15374
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
三年內(nèi)
1983
只做原裝正品
 詢(xún)價(jià)
Infineon/英飛凌
18+
TO252
12500
全新原裝正品,本司專(zhuān)業(yè)配單,大單小單都配
 詢(xún)價(jià)
INFINEON
24+
SOT252
99494
詢(xún)價(jià)
infineon
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢(xún)價(jià)
INFINEON
24+
NA
5000
原裝現(xiàn)貨,專(zhuān)業(yè)配單專(zhuān)家
 詢(xún)價(jià)
INFINEON
20+
TO-252
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
更多SPD供應(yīng)商 更新時(shí)間2025-2-7 12:09:00

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