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30P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ADM30P06E

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●FastSwitching ●HighPowerandcurrenthandingcapability ●GreenDeviceAvailable Description: TheADM30P06EisthehighcelldensitytrenchedP-chMOSFETs,designtoprovideexcellentRDS(ON)withlowgatecharge.providesuper

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

MSD30P06

P-Channel60-V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

MTB30P06

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB30P06KFP

P-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06V

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP??hannelD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP??hannelD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    SPD30P06P G

  • 功能描述：

    MOSFET SIPMOS Power Transistor

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
1932+
TO-252
2140
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
2022+
TO-252
57550
詢價
ADI
24+
BGA
3895
詢價
Infineon(英飛凌)
21+
TO-252
2376
原裝現(xiàn)貨,假一罰十
 詢價
INFINEON/英飛凌
22+
TO-252
87779
詢價
INFINEON
23+
TO-252
2376
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON
24+
TO-252
6000
公司渠道現(xiàn)貨
 詢價
INFINEON
21+
TO-252
2376
原裝現(xiàn)貨假一賠十
 詢價
INFINEON
24+
TO-252
8500
原廠原包原裝公司現(xiàn)貨,假一賠十,低價出售
 詢價
INF
23+
TO-252
10000
原裝正品,假一罰十
 詢價
更多SPD30P06P G供應(yīng)商 更新時間2025-5-1 14:48:00

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