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SPP02N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3_08

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3_11

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP03N60C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP03N60C3

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Ultralowcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPP03N60C3

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPP03N60S5

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPP03N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP04N50C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPP

  • 制造商：

    WELWYN

  • 制造商全稱：

    Welwyn Components Limited

  • 功能描述：

    General Purpose Wirewound Resistors

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-220
20000
原裝正品,假一罰十
 詢價
INFINEON
24+
原廠封裝
15259
原裝現(xiàn)貨假一罰十
 詢價
SYNC
24+
SOT23
6232
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
INFINEON
TO-220
800
正品原裝--自家現(xiàn)貨-實單可談
 詢價
SYNC
13+
SOT-23
2886
原裝分銷
 詢價
ALPS
2020+
SMD
10400
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SIPEX
24+
SMD-8
7500
十年品牌!原裝現(xiàn)貨!!!
 詢價
BOURNS/POWER
24+
SOP8
5800
原裝現(xiàn)貨,可開13%稅票
 詢價
INFINEON
13MY
TO-220
7500
原廠直銷
 詢價
Infineon
1701+
?
11520
只做原裝進口,假一罰十
 詢價
更多SPP供應商 更新時間2025-4-21 15:36:00

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