首頁(yè)>SRC60R090BT-E>規(guī)格書(shū)詳情
SRC60R090BT-E中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
SRC60R090BT-E |
| 功能描述 | 90mΩ, 600V, Super Junction N-Channel Power MOSFET |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | TO-247 |
| 文件大小 |
1.01108 Mbytes |
| 頁(yè)面數(shù)量 |
13 頁(yè) |
| 生產(chǎn)廠商 | List of Unclassifed Manufacturers |
| 企業(yè)簡(jiǎn)稱 |
ETC |
| 中文名稱 | 未分類制造商 |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-3-20 20:00:00 |
| 人工找貨 | SRC60R090BT-E價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
SRC60R090BT-E規(guī)格書(shū)詳情
Sep. 2018, Rev.1.4 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD.
General Description
The Sanrise SRC60R090B is a high voltage
power MOSFET, fabricated using advanced super
junction technology. The resulting device has
extremely low on resistance, low gate charge and
fast switching time, making it especially suitable
for applications which require superior power
density and outstanding efficiency.
The SRC60R090B break down voltage is 600V
and it has a high rugged avalanche characteristics.
The SRC60R090B is available in TO-220F，TO-
263-2 and TO-247 packages.
Features
? Ultra Low RDS(ON) = 90mΩ @ VGS = 10V.
? Ultra Low Gate Charge, Qg=90.3nC typ.
? Intrinsic Fast-Recovery Body Diode
? Fast switching capability
? Robust design with better EAS performance
Application
? AC/DC Power Supply
? EV Charger
? PC / Sever / Telecom
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INNOCHIPS |
23+ |
NA/ |
9656 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
尚陽(yáng)通 |
兩年內(nèi) |
NA |
170 |
實(shí)單價(jià)格可談 |
詢價(jià) | ||
SANRISE/尚陽(yáng)通 |
23+ |
TO-247, TO-220C, TO-220F |
7500 |
專營(yíng)國(guó)產(chǎn)功率器件 |
詢價(jià) | ||
尚陽(yáng)通 |
22+ |
TO252 |
978000 |
鄭重承諾只做原裝進(jìn)口貨 |
詢價(jià) |
