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TCP8510

MouldedTypeStraightPlugs

HOSIDEN

Hosiden Corporation

TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導體

供應商型號品牌批號封裝庫存備注價格
SAMHOP/三合微科
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SAMHOP
21+
QFN
10000
原裝現(xiàn)貨假一罰十
 詢價
SAMHOP
15+
QFN
1940
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
SAMHOP/三合微科
23+
NA/
5190
原廠直銷,現(xiàn)貨供應,賬期支持!
 詢價
SAMHOP
23+
QFN
1940
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SAMHOP
20+
QFN
1940
進口原裝現(xiàn)貨,假一賠十
 詢價
SAMHOP/三合微科
24+
QFN
60000
全新原裝現(xiàn)貨
 詢價
SII/SEIKO/日本精工
23+
SOT-23-5
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
SWP
22+
SMD
1000
絕對公司原裝現(xiàn)貨假一賠十
 詢價
HT金譽
2016+
SOT23-3
6523
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
更多SS8510供應商 更新時間2025-4-6 11:00:00

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