ST93CS46B6013TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q.

The 1K bit memory is organized as 64 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer.

■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION

■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

■ READY/BUSY SIGNAL DURING PROGRAMMING

■ SINGLE SUPPLY VOLTAGE

– 3V to 5.5V for the ST93CS46

– 2.5V to 5.5V for the ST93CS47

■ USER DEFINED WRITE PROTECTED AREA

■ PAGE WRITE MODE (4 WORDS)

■ SEQUENTIAL READ OPERATION

■ 5ms TYPICAL PROGRAMMING TIME

■ ST93CS46 and ST93CS47 are replaced by the M93S46