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STAP57045中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

STAP57045
廠商型號(hào)

STAP57045

功能描述

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件大小

366.39 Kbytes

頁(yè)面數(shù)量

17 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-21 8:54:00

STAP57045規(guī)格書詳情

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V

■ ST advanced PowerSO-10RF-STAP package

Description

The STAP57045 is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 28 V in common source mode at

frequencies of up to 1 GHz. STAP57045 boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in STAP1

plastic RF power package.

STAP package has been specially optimized for

RF needs and offers excellent performances and

ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

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