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STB6NC90Z

N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB6NC90Z-1

N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP6NC90ZFP

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW6NC90

N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW6NC90Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW6NC90Z

N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應商型號品牌批號封裝庫存備注價格
ST
23+
TO-262
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST
1709+
TO-263/D2-PAK
32500
普通
 詢價
ST
22+
TO
6000
十年配單,只做原裝
 詢價
ST/意法
23+
TO
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
ST
22+
TO-263
66900
原廠原裝現(xiàn)貨
 詢價
ST
23+
TO-263
16900
正規(guī)渠道,只有原裝!
 詢價
ST
22+
TO
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
ST
24+
TO-263
200000
原裝進口正口,支持樣品
 詢價
ST/意法
22+
TO
100056
詢價
ST
24+
TO
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多STB6NC90供應商 更新時間2025-3-21 15:27:00

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