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75N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

75N06

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

75N06G

N-Channel60-V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ADM75N06

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N06usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

CEB75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,75A,RDS(ON)=13mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    STB75N06

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
22+
TO-263
6000
十年配單,只做原裝
 詢價
ST
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
ST/意法
22+
TO-263
98913
詢價
ST
24+
TO-263
35400
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
ST
21+
TO-263
23480
詢價
ON Semiconductor(安森美)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
onsemi(安森美)
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
ST
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST
22+23+
TO-263
27657
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
STMicroelectronics
21+
D2PAK
1000
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
更多STB75N06供應(yīng)商 更新時間2025-3-16 14:02:00

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