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STC08IE120HP

Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm

Description TheSTC08IE120HPismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformancesinhighfrequency/highvoltageapplications. ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentCascodeconfiguration ■Lowequi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STC08IE120HV

Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm

Description TheSTC08IE120HVismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformancesinhighfrequency/highvoltageapplications. ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentCascodeconfiguration ■Lowequi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STC08IE150HV

Emitter Switched Bipolar Transistor ESBT 1500 V - 8A - 0.10 ohm

Description TheSTC08IE150HVismanufacturedinmonolithicESBTtechnology,aimedtoprovidebestperformanceinhighfrequency/highvoltageapplications.itisdesignedforuseingatedrivenbasedtopologies. Features ■Highvoltage/highcurrentcascodeconfiguration ■Lowequivalenton

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STC-11417400-06-C1

D-Band Down-Converter, 110 to 170 GHz

FEATURES FullWaveguideBandCoverage HighIFFrequencyRange APPLICATIONS TestLab Instrumentations AutoTestSet

ERAVANT

Eravant

STC128

NPN Silicon Transistor

Features ?Lowsaturationmediumcurrentapplication ?Extremelylowcollectorsaturationvoltage ?Suitableforlowvoltagelargecurrentdrivers ?HighDCcurrentgainandlargecurrentcapability ?Lowonresistance:RON=0.6?(Max.)(IB=1mA)

AUK

AUK corp

STC128

Marking：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowSaturationMediumCurrentApplication ExtremelyLowCollectorSaturationVoltage SuitableforLowVoltageLargeCurrentDrivers HighDCCurrentGainandLargeCurrentCapability

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

STC128

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●LowSaturationMediumCurrentApplication ●ExtremelyLowCollectorSaturationVoltage ●SuitableforLowVoltageLargeCurrentDrivers ●HighDCCurrentGainandLargeCurrentCapability

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

STC128

NPN Silicon Transistor

Features ?Lowsaturationmediumcurrentapplication ?Extremelylowcollectorsaturationvoltage ?Suitableforlowvoltagelargecurrentdrivers ?HighDCcurrentgainandlargecurrentcapability ?Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

STC128M

NPN Silicon Transistor

Features ?Lowsaturationmediumcurrentapplication ?Extremelylowcollectorsaturationvoltage ?Suitableforlowvoltagelargecurrentdrivers ?HighDCcurrentgainandlargecurrentcapability ?Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

STC128M

NPN Silicon Transistor

Features ?Lowsaturationmediumcurrentapplication ?Extremelylowcollectorsaturationvoltage ?Suitableforlowvoltagelargecurrentdrivers ?HighDCcurrentgainandlargecurrentcapability ?Lowonresistance:RON=0.6?(Max.)(IB=1mA)

AUK

AUK corp

晶體管資料

  • 型號(hào)：

    STC1015

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    功率開關(guān) （PSW）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    30V

  • 最大電流允許值：

    7.5A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    3DD72A,

  • 最大耗散功率：

    150W

  • 放大倍數(shù)：

    β>10

  • 圖片代號(hào)：

    D-133

  • vtest：

    30

  • htest：

    999900

  • atest：

    7.5

  • wtest：

    150

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    STC

  • 制造商：

    Eaton - Bussmann Electrical Division

  • 包裝：

    托盤

  • 描述：

    STORM CENTER MERCHANDISER

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