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STD25N03L

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STD25N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ?Ultralowon-resistance ?100avalanchetested Applications ?Switchin

STMICROELECTRONICSSTMicroelectronics

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STD25NE03L

N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

STMICROELECTRONICSSTMicroelectronics

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STD25NF10

N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputerapp

STMICROELECTRONICSSTMicroelectronics

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STD25NF10L

N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand

STMICROELECTRONICSSTMicroelectronics

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STD25NF10LA

N-channel 100 V, 0.030 廓, 25 A DPAK STripFET??II Power MOSFET

Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicesuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersfor

STMICROELECTRONICSSTMicroelectronics

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STD25NF10LA

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD25NF10LA

N-channel Enhancement Mode Power MOSFET

Features VDS=100V,ID=40A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

STD25NF10LT4

N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomand

STMICROELECTRONICSSTMicroelectronics

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STD25NF20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    STD25N

  • 制造商:

    SAMHOP

  • 制造商全稱:

    SAMHOP

  • 功能描述:

    N-Channel E nhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
23+
TO-252
8795
詢價(jià)
SAMHOP
18+
TO-252
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
ST
1709+
TO-252/D-
32500
普通
詢價(jià)
S
22+
TO-251
6000
十年配單,只做原裝
詢價(jià)
SamHop
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價(jià)
S
22+
TO-251
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
SAMHOP
2024+
TO251
50000
原裝現(xiàn)貨
詢價(jià)
ST
21+
SOT-252
23480
詢價(jià)
24+
TO-252-3
8866
詢價(jià)
ST
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
更多STD25N供應(yīng)商 更新時(shí)間2025-4-2 14:00:00