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STD9NM60N

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9NM60N

Marking：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

9NM60

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60G-TND-R

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60L-TND-R

9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STD9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET

TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF9NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET

TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STD9NM60N

  • 功能描述：

    MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST(意法半導(dǎo)體)
24+
DPAK
16906
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!
 詢價(jià)
ST
23+
TO252
6996
只做原裝正品現(xiàn)貨
 詢價(jià)
ST/意法
24+
TO-252
17500
只做原廠渠道 可追溯貨源
 詢價(jià)
STM
21+
10000
TO-252-3 (DPAK)
 詢價(jià)
STM
23+
TO-252-3 (DPAK)
10000
原裝現(xiàn)貨支持送檢
 詢價(jià)
ST專家
2021+
DPAK
6800
原廠原裝,歡迎咨詢
 詢價(jià)
ST(意法半導(dǎo)體)
24+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ST/意法
24+
TO-252
504384
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
ST
2025+
TO-252-3
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
更多STD9NM60N供應(yīng)商 更新時(shí)間2025-4-26 13:18:00

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