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HGTD3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

HARRIS

Harris Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

Harris Corporation

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HARRIS
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢價(jià)
TH/韓國(guó)太虹
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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HARRIS
23+
TO-220
489
全新原裝正品現(xiàn)貨,支持訂貨
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HARRIS
20+
TO-220
489
進(jìn)口原裝現(xiàn)貨,假一賠十
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22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
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ST
22+
TO220AB
9000
原廠渠道,現(xiàn)貨配單
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ST/意法
23+
N
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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ST/意法
22+
N
30000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
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STMicroelectronics
2022+
TO-220AB
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
ST/意法
22+
N
28000
原裝現(xiàn)貨只有原裝.假一罰十
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更多STGP3N60C3供應(yīng)商 更新時(shí)間2025-3-16 15:20:00

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