零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
STH47N60DM6-2AG | | Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmeshTM DM6 Power MOSFET in an H2PAK-2 package
Features
?AEC-Q101qualified
?Fast-recoverybodydiode
?LowerRDS(on)perareavspreviousgeneration
?Lowgatecharge,inputcapacitanceandresistance
?100avalanchetested
?Extremelyhighdv/dtruggedness
?Zener-protected
Description
Thishigh-voltageN-channelPowerMOSFETis | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
STB47N60DM6AG | | Automotive-gradeN-channel600V,70mtyp.,36AMDmesh?DM6PowerMOSFETinaD2PAKpackage
Features
?AEC-Q101qualified
?Fast-recoverybodydiode
?LowerRDS(on)perareavspreviousgeneration
?Lowgatecharge,inputcapacitanceandresistance
?100avalanchetested
?Extremelyhighdv/dtruggedness
?Zener-protected
Description
Thishigh-voltageN-channelPowerMOSFETis | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
STHU47N60DM6AG | | Automotive-gradeN-channel600V,70m廓typ.,36AMDmeshDM6PowerMOSFETinanHU3PAKpackage | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
STI47N60DM6AG | | Automotive-gradeN-channel600V,70mtyp.,36AMDmeshTMDM6PowerMOSFETinanI2PAKpackage
Features
?AEC-Q101qualified
?Fast-recoverybodydiode
?LowerRDS(on)perareavspreviousgeneration
?Lowgatecharge,inputcapacitanceandresistance
?100avalanchetested
?Extremelyhighdv/dtruggedness
?Zener-protected
Description
Thishigh-voltageN-channelPowerMOSFETis | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |