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9N80

9Amps,800VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC9N80isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergy

UTCUnisonic Technologies

友順友順科技股份有限公司

9N80

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

9N80

9A,800VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

9N80A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HFP9N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFH9N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH9N80

HiPerFETPowerMOSFETs-N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fasti

IXYS

IXYS Corporation

IXFH9N80Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRatedLowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFT9N80Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRatedLowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

SSFP9N80

StarMOSTPowerMOSFET

VDSS=800V ID25=7.5A RDS(ON)=1.2Ω Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfaster switchings

Good-Ark

GOOD-ARK Electronics

供應(yīng)商型號品牌批號封裝庫存備注價格
SGSTHOMSON
24+
原裝進口原廠原包接受訂貨
374
原裝現(xiàn)貨假一罰十
 詢價
ST
TO-3P
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22+
TO-3P
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
24+
N/A
3000
詢價
ST
23+
TO3P
16900
正規(guī)渠道,只有原裝!
 詢價
ST/意法
24+
TO3P
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
ST
23+
TO-247
8795
詢價
ST
24+
TO-3P
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
ST/意法
23+
TO-3P
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
ST
24+
TO-3P
2500
原裝現(xiàn)貨熱賣
 詢價
更多STH9N80TSTDTS供應(yīng)商 更新時間2025-2-12 13:30:00

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