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STI22NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP22NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP22NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistances ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW22NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    STP22NM60N-H

  • 制造商：

    ST

  • 功能描述：

    N-channel 600 V, 0.190 ?, 16 A MDmesh II Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
STMICRO
2405+
原廠封裝
12500
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐
 詢價(jià)
ST
21+
TO-220
23480
詢價(jià)
ST/意法
21+
TO-220
8000
優(yōu)勢供應(yīng) 實(shí)單必成 可開增值稅13點(diǎn)
 詢價(jià)
ST/意法
23+
TO-220
8000
原裝正品實(shí)單必成
 詢價(jià)
ST/意法
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價(jià)
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
2022+
TO-220AB
8000
只做原裝支持實(shí)單,有單必成。
 詢價(jià)
ST/意法
24+
NA
14280
強(qiáng)勢渠道訂貨 7-10天
 詢價(jià)
ST/意法
2023+
TO-220AB
20000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
ST/意法
24+
TO220
42000
只做全新原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多STP22NM60N-H供應(yīng)商 更新時(shí)間2025-5-6 9:00:00

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