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STP36N06LFI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.033? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

36N06

FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FTD36N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FTD36N06N

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FTU36N06N

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTB36N06E

TMOSPOWERFET36AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB36N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB36N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB36N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB36N06V

TMOSPOWERFET32AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    STP36N06LFI

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
N/A
1000
詢價
ST
24+
TO-220F
20000
原裝現(xiàn)貨熱賣
 詢價
ST
23+
TO-220F
8795
詢價
ST
17+
TO-220F
6200
詢價
ST全系列
22+23+
TO-220F
26655
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ST
2010
TO-220F
500
進口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
ST
23+
TO-220F
16900
正規(guī)渠道,只有原裝!
 詢價
ST
TO-220F
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22+
TO-220F
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
ST
24+
TO-220F
200000
原裝進口正口,支持樣品
 詢價
更多STP36N06LFI供應(yīng)商 更新時間2025-2-14 16:00:00

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