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STP3NB60中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

STP3NB60
廠商型號(hào)

STP3NB60

功能描述

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

文件大小

115.89 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-19 12:20:00

STP3NB60規(guī)格書詳情

DESCRIPTION

Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 3.3 ?

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

產(chǎn)品屬性

  • 型號(hào):

    STP3NB60

  • 功能描述:

    MOSFET RO 512-FQP3N60 3/05

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
22+
TO-220
35288
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ST/意法
24+
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5000
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ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
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STP3NB60FP
2721
2721
詢價(jià)
ST/意法
22+
TO-220
20000
保證原裝正品,假一陪十
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ST
1942+
TO-220
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
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ST
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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ST
06+
TO-220
10000
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ST
2020+
TO-220
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
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ST/意法
23+
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50000
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