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STP4NB80

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP4NB80FP

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP4NB80FP

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

4NB80

N-CHANNEL800V-3ohm-4A-TO-220/TO-220FPPowerMESHOMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

P4NB80

N-CHANNEL800V-3ohm-4A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB4NB80

N-CHANNEL800V-3ohm-4A-TO-220/TO-220FPPowerMESHOMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB4NB80FP

N-CHANNEL800V-3ohm-4A-TO-220/TO-220FPPowerMESHOMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數

  • 型號：

    STP4NB80

  • 功能描述：

    MOSFET RO 512-FQP4N80 3/05

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ST
24+
TO-220
71
詢價
ST
23+
TO-220
8795
詢價
ST
05+
TO-220
10000
全新原裝 絕對有貨
 詢價
ST
2015+
SOP/DIP
19889
一級代理原裝現貨,特價熱賣!
 詢價
ST
2016+
DIP
6528
只做原廠原裝現貨!終端客戶個別型號可以免費送樣品!
 詢價
STM
24+
原廠封裝
1000
原裝現貨假一罰十
 詢價
ST
24+
TO-220
2500
原裝現貨熱賣
 詢價
ST
17+
TO-220
6200
詢價
ST
16+
TO-220
10000
全新原裝現貨
 詢價
ST
2020+
TO-220
350000
100%進口原裝正品公司現貨庫存
 詢價
更多STP4NB80供應商 更新時間2025-4-26 15:30:00

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