首頁 >STP4NC60,STP4NC60FP>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2AD2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
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