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STU11N65M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU11N65M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD11N65M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD11N65M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF11N65M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI11N65M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFU11N65M2

N-channel650V,0.60typ.,7AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP11N65M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP11N65M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STMicroelectronics
24+
TO-251(IPAK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
STM
20+
2000
TO-251 (IPAK)
 詢(xún)價(jià)
STM
23+
TO-251 (IPAK)
3000
原裝現(xiàn)貨支持送檢
 詢(xún)價(jià)
ST(意法半導(dǎo)體)
24+
IPAK
7845
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
ST
2447
TO-251
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
STM
1809+
TO-251
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
22+
NA
835
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
ST
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
ST/意法
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
ST/意法
2022+
5000
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
 詢(xún)價(jià)
更多STU11N65M2供應(yīng)商 更新時(shí)間2025-5-25 14:14:00

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