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STW26NM60ND中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
STW26NM60ND規(guī)格書詳情
Description
These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
Features
? 100 avalanche tested
? Low input capacitance and gate charge
? Low gate input resistance
? Extremely high dv/dt and avalanche capabilities
Applications
? Switching applications
產(chǎn)品屬性
- 型號：
STW26NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
MOSFET N-CH 600V 21A TO247
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
ST |
23+ |
TO-247-3 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST/意法 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
25+ |
原廠原封可拆 |
54685 |
百分百原裝現(xiàn)貨有單來談 |
詢價 | ||
ST/意法 |
23+ |
TO247 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
ST/意法 |
2022+ |
TO-247 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
ST/意法 |
22+ |
T0-247 |
18000 |
原裝正品 |
詢價 | ||
ST/意法 |
2022+ |
TO-247 |
30000 |
進口原裝現(xiàn)貨供應(yīng),絕對原裝 假一罰十 |
詢價 | ||
ST/意法 |
24+ |
N/A |
14280 |
強勢渠道訂貨 7-10天 |
詢價 | ||
ST |
21+ |
TO-247-3 |
23480 |
詢價 |
