首頁(yè)>SVSP7N60FD2>規(guī)格書(shū)詳情
SVSP7N60FD2中文資料士蘭微數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
SVSP7N60FD2 |
| 功能描述 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | TO-220F-3L |
| 文件大小 |
352.36 Kbytes |
| 頁(yè)面數(shù)量 |
9 頁(yè) |
| 生產(chǎn)廠商 | Silan Microelectronics Joint-stock |
| 企業(yè)簡(jiǎn)稱(chēng) |
SILAN【士蘭微】 |
| 中文名稱(chēng) | 杭州士蘭微電子股份有限公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-19 18:31:00 |
SVSP7N60FD2規(guī)格書(shū)詳情
DESCRIPTION
SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s super junction MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies.
FEATURES
? 7A,600V, RDS(on)(typ.)=0.48?@VGS=10V
? New revolutionary high voltage technology
? Ultra low gate charge
? Enhanced avalanche capability
? Extreme dv/dt rated
? High peak current capability
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SILAN/士蘭微 |
2052+ |
TO220 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
SILAN/士蘭微 |
21+ |
TO220 |
38000 |
詢價(jià) | |||
冠坤電子 |
21+ |
10mm*12.5mm |
13 |
全新原裝鄙視假貨15118075546 |
詢價(jià) | ||
SILAN/士蘭微 |
25+ |
DFN |
10000 |
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303 |
詢價(jià) | ||
3M |
新 |
17 |
全新原裝 貨期兩周 |
詢價(jià) | |||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價(jià) | ||
SILAN |
24+ |
* |
37 |
C08-場(chǎng)效應(yīng)管 |
詢價(jià) | ||
SILAN/士蘭微 |
TO220 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
SAMSUNG |
24+ |
QFP |
71 |
詢價(jià) | |||
SAMSUNG |
16+ |
QFP |
1052 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) |
